Photoluminescence Properties of CdSe:Mn$^{2+}$ Thin Films Synthesized Using the Chemical Bath Deposition (CBD) Technique

Authors

  • Th. Biswajit Department of Physics, D.M. University, Imphal, Manipur, India Author
  • L Raghumani Singh Department of Physics, D.M. College of Science, D.M. University, Imphal, Manipur, India Author
  • L. Rajen Singh Department of Physics, D.M. College of Science, D.M. University, Imphal, Manipur, India Author

Keywords:

Band Gap, CBD, CdSe

Abstract

The Photoluminescence (PL) properties of CdSe is crucial for its optoelectronics applications like LEDs and lasers. The PL analysis can also characterize the quality of CdSe by revealing electronic states, defects, and surface properties, which is essential for optimizing device performance. The undoped CdSe and Mn$^{2+}$ doped CdSe thin films were deposited on ordinary glass substrate using Chemical Bath Deposition (CBD) Method. The structural characterization and surface morphological study of the thin films were done using XRD and SEM. The UV-Visible Spectroscopy was used to determine the band gap energy for thin films. The PL excitation and emission spectra of thin films were studied for exploration of its potential to develop Laser and LED.

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Published

2026-01-20

How to Cite

[1]
T. Biswajit, L. R. Singh, and L. R. Singh, “Photoluminescence Properties of CdSe:Mn$^{2+}$ Thin Films Synthesized Using the Chemical Bath Deposition (CBD) Technique”, AIJR Abs., vol. 8, no. 1, p. 4, Jan. 2026, Accessed: Jun. 13, 2026. [Online]. Available: https://abstracts.aijr.org/index.php/abs/article/view/147